Discrete SiC Schottky Diode are designed for high efficiency and precise control, featuring excellent high-temperature endurance, voltage tolerance, and high-frequency response. Widely used in industrial automation, automotive electronics, and energy management systems, they deliver stable and efficient power conversion solutions.
Image | Part Number | Type | Package | Circuit Diagram | Blocking Voltage (V) | Current (A) | RDs(on) (mΩ) | Tjmax (℃) | Specifications |
|---|---|---|---|---|---|---|---|---|---|
 | SiC SBD | TO-220-2 | 1200 | 2 | 159 | ||||
| SiC SBD | TO-220-2 | 650 | 4 | 153 | ||||
 | SiC SBD | DFN8*8 | 650 | 6 | 159 | ||||
 | SiC SBD | SOT-227 | 1200 | 120 | 108 | ||||
 | SiC SBD | TO-247-3 | 1200 | 16 | 155 | ||||
| SiC SBD | TO-247-3 | 1200 | 20 | 152 | ||||
 | SiC SBD | TO-247-2 | 1200 | 20 | 150 | ||||
| SiC SBD | TO-247-3 | 1200 | 40 | 151 | ||||
| SiC SBD | TO-247-2 | 1200 | 40 | 155 | ||||
| SiC SBD | TO-247-2 | 1200 | 60 | 144 | ||||
| SiC MOSFET | TO-247-3 | 1200 | 75 | 37 | ||||
 | SiC MOSFET | TO-247-4 | 1200 | 75 | 37 | ||||
| SiC MOSFET | TO-247-3 | 1200 | 42 | 75 | ||||
| SiC MOSFET | TO-247-4 | 1200 | 42 | 75 | ||||
| SiC MOSFET | TO-247-3 | 1700 | 9 | 650 | ||||
 | SiC MOSFET | TO-220F-3 | 1700 | 175 | |||||
 | SiC MOSFET | TO-263-7 | 1700 | 175 |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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