Discrete SiC Schottky Diode are designed for high efficiency and precise control, featuring excellent high-temperature endurance, voltage tolerance, and high-frequency response. Widely used in industrial automation, automotive electronics, and energy management systems, they deliver stable and efficient power conversion solutions.
Image | Part Number | Type | Package | Circuit Diagram | Blocking Voltage (V) | Current (A) | RDs(on) (mΩ) | Tjmax (℃) | Specifications |
|---|---|---|---|---|---|---|---|---|---|
 | SiC MOSFET | D:TO-247-3L | 1200 | 40mΩ | |||||
 | SiC MOSFET | TO-247-4L | 1200 | 40mΩ | |||||
| SiC MOSFET | TO-247-4L | 1200 | 75mΩ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
Solution
Support
Years of experience
Countries & Areas
Customers
㎡ Manufacturing Factory
лет опыта
Страны и регионы
Клиентов
㎡ Производственная фабрика
