HIITIO power modules are designed for efficient power conversion and control, integrating IGBT, MOSFET, and SiC technologies. They offer high power density and low loss, widely used in industrial, renewable energy, electric transportation, and home appliances.
Image | Part Number | Type | Package | Circuit Diagram | Blocking Voltage (V) | Current (A) | RDs(on) (mΩ) | Tjmax (℃) | Specifications |
---|---|---|---|---|---|---|---|---|---|
IGBT | P: 140×73×38 | Single Switch | 6500 | 250 | ⋅ | ||||
IGBT | P: 140×73×38 | Half Bridge | 3300 | 250 | ⋅ | ||||
IGBT | E/E2: 190×140×38 | Single Switch | 1700 | 3600 | ⋅ | ||||
IGBT | X1: 144×100×40 | Half Bridge | 3300 | 450 | ⋅ | ||||
IGBT | G: 160×130×38 | Double switch | 3300 | 500 | ⋅ | ||||
IGBT | A/A2: 190×140×48 | Single Switch | 6500 | 750 | ⋅ | ||||
IGBT | X: 140×130×48 | Half Bridge | 6500 | 750 | ⋅ | ||||
IGBT | X: 140×130×48 | Single Switch | 4500 | 800 | ⋅ | ||||
SiC/Si Hybrid | Econo PACK 2H | FT: Three phase | 1200 | 100 | ⋅ | 175 | |||
SiC/Si Hybrid | Easy 2B | ANPC | 1200 | 100 | 9.5 | 175 | |||
SiC/Si Hybrid | HPD | ANPC | 1200 | 300 | 4.3 | ||||
SiC/Si Hybrid | Flow0 | Dual Boost | 1200 | 50 | ⋅ | 175 | |||
SiC/Si Hybrid | Econo Dual 3A | Half Bridge | 1200 | 900 | ⋅ | 175 | |||
SiC MOSFET | TO-247-3 | 1200 | 75 | 37 | |||||
SiC MOSFET | TO-247-4 | 1200 | 75 | 37 | |||||
SiC MOSFET | TO-247-3 | 1200 | 42 | 75 | |||||
SiC MOSFET | TO-247-4 | 1200 | 42 | 75 | |||||
SiC MOSFET | TO-247-3 | 1700 | 9 | 650 | |||||
SiC MOSFET | TO-220F-3 | 1700 | ⋅ | 175 | |||||
SiC MOSFET | TO-263-7 | 1700 | ⋅ | 175 |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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