The HCM13S12T4K3A is a 1200V 13mΩ Silicon Carbide (SiC) Power MOSFET in a TO-247-4L package, designed for high-efficiency and high-reliability applications. Built with 3rd Generation SiC MOSFET technology, it offers low on-resistance, high-speed switching, and excellent thermal performance.
Parameter | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Drain-source voltage | VDS max | VGs=0V,Ip=100μA | 1200 | V |
Gate-source voltage | VGS max | Absolute maximum values | -10/+22 | V |
VGS op | Recommended operational values | -5/+18 | V | |
Continuous drain current | ID | VGs=18V,Tc=25℃ | 155 | A |
VGs=18V,Tc=100℃ | 110 | |||
Pulsed drain current | ID pulse | Pulse width tp limited by Tvjmax | 310 | A |
Power dissipation | PD | Tc=25℃, Tvjmax=175℃ | 555 | W |
Operating junction temperature | Tvjop | -55~175 | ℃ | |
Storage temperature range | Tstg | -55~175 | ℃ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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