The HCG600FC170D3K4 is a high-performance 1700V 600A IGBT module designed for demanding power electronics applications. Featuring an E6 package with integrated free-wheeling diode (FWD) and NTC thermistor, this module offers exceptional efficiency and reliability. Built with an advanced 1700V trench gate and field stop structure, it ensures low switching losses and high short circuit capability, making it ideal for industrial and renewable energy systems.
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-emitter voltage | VCES | VGE=0V, Tvj=25℃ | 1700 | V |
| DC collector current | lc | Tc=110℃,Tvjmax=175℃ | 600 | A |
| Peak collector current | ICM | tp=1ms | 1200 | A |
| Gate-emitter peak voltage | VGES | ±20 | V | |
| Total power dissipation | Ptot | Tc=25℃,Tvjmax=175℃ | 3660 | W |
| Repetitive peak reversevoltage | VRRM | Tvj=25℃ | 1700 | V |
| Continuous DC forward current | IF | 600 | A | |
| Repetitive peak forward current | IFRM | tp=1ms | 1200 | A |
| Pt-value | 12t | VR=0V,tp=10ms,Tvj=125℃ | 59000 | A2s |
| IGBT short circuit withstand time | tpsc | 10 | μs | |
| Maximum junction temperature | Tvjmax | 175 | ℃ | |
| Operating junction temperature | Tvjop | -40~150 | ℃ | |
| Storage temperature | Tstg | -40~125 | ℃ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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