The HCG450FH120D3K4 IGBT Module from HIITIO is a high-performance 1200V, 450A power semiconductor device in an E6 package. Featuring low switching loss, high reliability, and a positive temperature coefficient, this module integrates a freewheeling diode (FWD) and an NTC for efficient thermal monitoring.
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCES | 1200 | V |
| DC Collector Current, Tc=100℃ | Ic | 450 | A |
| Peak Collector Current, tp=1ms | ICM | 900 | A |
| Gate-Emitter Voltage | VGES | ±20 | V |
| Diode Forward Current | IF | 450 | A |
| Diode Peak Forward Current, tp=1ms | IFRM | 900 | A |
| IGBT Maximum Power Dissipation | PD | 2080 | W |
| IGBT Short Circuit Withstand Time | tsc | 10 | μs |
| Maximum Junction Temperature | Tvj, max | 175 | ℃ |
| Operating Junction Temperature | Tvj, op | -40~150 | ℃ |
| Storage Temperature Range | Tstg | -40~125 | ℃ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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