The HCG2000S450S2K1 is an industrial-grade IGBT module specifically designed for ultra-high voltage applications. Featuring press-pack technology and advanced planar gate structure, this module delivers unmatched performance in HVDC and renewable energy systems.
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | VGE=0V,Tvj=25℃ | 4500 | V |
| DC Collector Current | lc | Tc=100℃,Tvj=150℃ | 2000 | A |
| Peak Collector Current | CM | tp=1ms | 4000 | A |
| Gate-Emitter Voltage | VGES | ±20 | V | |
| Total Power Dissipation | Ptot | Tc=25°℃,Tvj=150℃ | 20800 | W |
| DC Forward Current | IF | 2000 | A | |
| Peak Forward Current | IFRM | tp=1ms | 4000 | A |
| Surge Current | IFSM | VR=0V,Tvj=125℃,
tp=10ms,half-sinewave |
14000 | A |
| IGBT Short Circuit SOA | tpsc | Vcc=3400V,VCEM CHIP≤4500V VGE≤15V,Tvj≤150℃ |
10 | μs |
| Maximum Junction Temperature | Tvj(max) | 125 | ℃ | |
| Junction Operating Temperature | Tv(op) | -40~150 | ℃ | |
| Case temperature | Tc | -40~150 | ℃ | |
| Storage Temperature | Tstg | -40~125 | ℃ | |
| Mounting force | FM | 60-75 | kN |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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