The HCG1000S330H1K1 is a premium-grade IGBT power module designed for demanding high-power applications. Featuring advanced planar gate technology and field-stop structure, this module delivers exceptional performance in a standard H1 package.
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | VGE=0V,Tvj=25℃ | 3300 | V |
| DC Collector Current | lc | Tc=100℃,Tvj=150℃ | 1000 | A |
| Peak Collector Current | CM | tp=1ms | 2000 | A |
| Gate-Emitter Voltage | VGES | ±20 | V | |
| Total Power Dissipation | Ptot | Tc=25°℃,Tvj=150℃ | 10 | kW |
| DC Forward Current | IF | 1000 | A | |
| Peak Forward Current | IFRM | tp=1ms | 2000 | A |
| Surge Current | IFSM | VR=0V,Tvj=150℃,tp=10ms,half-sinewave | 9000 | A |
| IGBT Short Circuit SOA | tpsc | Vcc=2500V,VCEM CHIP≤3300V VGE≤15V,Tvj≤150℃ |
10 | μs |
| Maximum Junction Temperature | Tvj(max) | 150 | ℃ | |
| Junction Operating Temperature | Tv(op) | -40~150 | ℃ | |
| Case temperature | Tc | -40~150 | ℃ | |
| Storage Temperature | T stg | -40~125 | ℃ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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