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1200V 32mΩ Silicon Carbide Power MOSFET TO-247-4L

  • High blocking voltage (1200V) with ultra-low RDS(on) of 32mΩ
  • High-speed switching with low parasitic capacitance
  • Easy parallel operation and simple gate drive
  • Robust performance up to 175℃ junction temperature
  • Halogen-free, RoHS-compliant
  • Suitable for resonant topologies
SKU HCM32S12T4K2B Category

Description

The HCM32S12T4K2B is a 1200V 32mΩ Silicon Carbide (SiC) Power MOSFET in a TO-247-4L package, designed for high-efficiency and high-reliability applications. Built with 3rd Generation SiC MOSFET technology, it offers low on-resistance, high-speed switching, and excellent thermal performance.

Maximum Ratings

Parameter Symbol Condition Value Unit
Drain-source voltage VDS max VGs=0V,Ip=100μA 1200 V
Gate-source voltage VGS max Absolute maximum values -10/+22 V
VGS op Recommended operational values -5/+18 V
Continuous drain current ID VGs=18V,Tc=25℃ 90 A
VGs=18V,Tc=100℃ 64
Pulsed drain current ID pulse Pulse width tp limited by Tvjmax 270 A
Power dissipation PD Tc=25℃, Tvjmax=175℃ 417 W
Operating junction temperature Tvjop -55~175
Storage temperature range Tstg -55~175

Applications

  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC Converters
  • EV Motor drive

Dimensions (mm)

Downloads

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