The HCG600FH120D3K4D2 is a high-performance 1200V 600A IGBT module designed for demanding power electronics applications. Featuring an E6 package with integrated freewheeling diode (FWD) and NTC thermistor, this module ensures efficient and reliable operation in high-power systems.
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-emitter voltage | VCES | VGE=OV,Tvj=25℃ | 1200 | V |
| DC collector current | Ic | Tc=115℃, Tyj,max=175℃ | 600 | A |
| Peak collector current | ICM | tp=1ms | 1200 | A |
| Gate-emitter peak voltage | VGES | ±20 | V | |
| Total power dissipation | Ptot | Tc=25°℃, Tvj,max=175℃ | 3950 | W |
| Repetitive peak reversevoltage | VRRM | Tvj=25℃ | 1200 | V |
| Continuous DC forwardcurrent | IF | 600 | A | |
| Repetitive peak forwardcurrent | IFRM | tp=1ms | 1200 | A |
| Rt-value | 12t | VR=0V,tp=10ms,Tv=125℃ | 51000 | A2s |
| IGBT short circuit withstand time | tpsc | 10 | μs | |
| Maximum junction temperature | Tvjmax | 175 | ℃ | |
| Operating junction temperature | Tvjop | -40~150 | ℃ | |
| Storage temperature | Tst | -40~125 | ℃ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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