HCS05FH230E2B2 is a cutting-edge SiC MOSFET module featuring a 2300V voltage rating and ultra-low 5mΩ on-resistance. It adopts a half-bridge topology with Si₃N₄ AMB technology and is enclosed in an Easy2B package for efficient heat dissipation and mechanical strength.
| MAXIMUM RATINGS |
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| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDsS | 2300 | V |
| Gate-Source Voltage | VGs | +22/-10 | V |
| Continuous Drain Current @Tc=80(TJ=175℃) | IDS | 240 | A |
| Pulsed Drain Current (TJ=175℃) | IDPulse | 300 | A |
| Maximum Power Dissipation @Tc=80℃(TJ=175℃) | Ptot | 800 | W |
| Minimum Operating Junction Temperature | TJMIN | -40 | ℃ |
| Maximum Operating Junction Temperature | TJMAX | 175 | ℃ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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