Discover HIITIO’s innovative SiC Power Semiconductor Module series, harnessing the power of Silicon Carbide for next-generation power electronics. These modules deliver exceptional efficiency, robust high-temperature performance, and unmatched reliability, perfect for demanding applications in electric vehicles, renewable energy, and industrial sectors.
Image | Part Number | Type | Package | Circuit Diagram | Blocking Voltage (V) | Current (A) | RDs(on) (mΩ) | Tjmax (℃) | Specifications |
---|---|---|---|---|---|---|---|---|---|
SiC | Econo Dual 3C | Half Bridge | 1200 | 800 | 1.7 | 175 | |||
SiC | Econo Dual 3C | Half Bridge | 1400 | 800 | 2.3 | 175 | |||
SiC | Econo Dual 3A | Half Bridge | 1700 | 800 | 2.8 | 175 | |||
SiC | Econo Dual 3A | Chopper | 1200 | 900 | 2.1 | 175 | |||
SiC | Econo Dual 3A | Half Bridge | 1200 | 900 | 2 | 175 |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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