The HCH900FH120D3ME7 is a half-bridge SiC hybrid power module. It integrates high-performance IGBT chips and SiC Schottky barrier diodes (SBD), designed for applications such as high-power switching and motor control.
The HCH900FH120D3ME7 is a half-bridge SiC hybrid power module. It integrates high-performance IGBT chips and SiC Schottky barrier diodes (SBD), designed for applications such as high-power switching and motor control.
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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