The HCG770FT075H5T7L, a cutting-edge 750V IGBT module. Engineered for demanding environments, this RoHS-compliant module delivers exceptional efficiency, reliability, and thermal performance. Ideal for hybrid electric vehicles (HEV), motor drives, and inverter systems, it combines advanced Field Stop Trench IGBT technology with integrated free-wheeling diodes and temperature sensing for seamless operation up to 185°C junction temperature.
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T,=25°C unless otherwise specified
| Symbol | Parameter/Test Conditions | Values | Unit | |
|---|---|---|---|---|
| VCES | Collector Emitter Voltage | Tvj=25℃ | 750 | V |
| VGES | Gate Emitter Voltage | ±20 | ||
| IC | DC Collector Current | TF=60℃,Tvjmax=185℃ | 270 | A |
| ICM | Repetitive Peak Collector Current | tp=1ms | 900 | |
| Tvjmax | Max. Junction Temperature | 185 | ℃ | |
| P tot | Power Dissipation Per IGBT | TF=60℃,Tvjmax=185℃ | 735 | W |
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T,=25°C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Values | Unit | |
|---|---|---|---|---|
| VRRM | Repetitive Reverse Voltage | Tvj=25℃ | 750 | V |
| IF(AV) | Average Forward Current | TF=60℃, Tvjmax=185℃ | 160 | A |
| IFRM | Repetitive Peak Forward Current | tp=1ms | 900 | |
| Tvjmax | Max. Junction Temperature | 185 | ℃ | |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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