650V 450A Easy 3B IGBT Power Module
- Collector-Emitter Voltage (VCES): 650V
- DC Collector Current (ICDC): 335A (T1/T4), 299A (T2/T3)
- Repetitive Peak Collector Current (ICRM): 900A (T1/T4), 640A (T2/T3)
- Total Power Dissipation (Ptot): 442W (T1/T4), 358W (T2/T3)
- Gate-Emitter Voltage (VGES): ±20V
- Operating Junction Temperature (Tj): Up to 175°C
- Thermal Resistance (RthJH): 0.215 K/W (T1/T4), 0.265 K/W (T2/T3)
Description
The HCG450FL065E3RE is a high-efficiency 650V 450A IGBT module from Zhejiang HIIITIO New Energy Co., Ltd., tailored for I-type 3-level NPC inverter applications. Utilizing trench gate/field-stop technology, it delivers low VCEsat, reduced switching losses, and a positive temperature coefficient for optimal performance. The module features an Al2O3 substrate for low thermal resistance, a compact low-inductance design, and DBC technology for superior heat dissipation, ensuring reliability in high-power systems.
Key Features:
- 650V 3-Level NPC Topology: Optimized for high-power inverters.
- Low VCEsat & Switching Losses: Enhances efficiency in high-frequency operations.
- Al2O3 Substrate: Provides low thermal resistance for reliable performance.
- Compact Low-Inductance Design: Minimizes EMI and improves stability.
- DBC Technology: Enhances heat dissipation for extended lifespan.
- Wide Applications: Suitable for UPS, solar, APF/SVG, and 3-level systems.
Applications
- 3-Level-Applications
- PCS
- UPS Systems
- Solar Applications
- APF/SVG
Dimensions (mm)
