650V 450A Easy 3B IGBT Power Module
- Collector-Emitter Voltage (VCES): 650V
- DC Collector Current (ICDC): 320A
- Repetitive Peak Collector Current (ICRM): 900A
- Total Power Dissipation (Ptot): 396W
- Gate-Emitter Voltage (VGES): ±20V
- Operating Junction Temperature (Tj): Up to 175°C
- Thermal Resistance (RthJH): 0.24 K/W
Description
The HCG450FL065E3FC is a high-performance 650V 450A IGBT module from Zhejiang HIIITIO New Energy Co., Ltd., engineered for 3-level NPC inverter applications. Featuring trench gate/field-stop technology, it offers low VCEsat, low switching losses, and a positive temperature coefficient for superior efficiency. The module includes an integrated DC capacitor, Al2O3 substrate for low thermal resistance, and copper substrate technology for enhanced thermal management and reliability.
Key Features:
- 650V 3-Level NPC Topology: Optimized for high-power inverters.
- Low VCEsat & Switching Losses: Enhances efficiency in high-frequency operations.
- Integrated DC Capacitor: Improves circuit stability.
- Al2O3 & Copper Substrate: Superior thermal conductivity and reliability.
- Low-Inductance Design: Reduces EMI for stable performance.
- Wide Applications: Suitable for PCS, UPS, solar, and APF/SVG systems.
Applications
- 3-Level-Applications
- PCS
- UPS Systems
- Solar Applications
- APF/SVG
Dimensions (mm)
