650V 375A Easy 3B IGBT Power Module
- Collector-Emitter Voltage (VCES): 650V
- DC Collector Current (ICDC): 285A
- Repetitive Peak Collector Current (ICRM): 750A
- Total Power Dissipation (Ptot): 380W
- Gate-Emitter Voltage (VGES): ±20V
- Operating Junction Temperature (Tj): Up to 175°C
- Isolation Voltage (Visol): 3.0kV RMS
Description
The HCG375FL065E3RC is a high-efficiency 650V 375A IGBT module from Zhejiang HIIITIO New Energy Co., Ltd., designed for 3-level NPC inverter applications. Utilizing advanced trench gate/field-stop technology, it features low VCEsat, low switching losses, and a positive temperature coefficient for enhanced performance. The module integrates a DC capacitor, Al2O3 substrate for low thermal resistance, and DBC technology for an isolated heatsink, ensuring excellent thermal management and reliability.
Key Features:
- 650V 3-Level NPC Topology: Optimized for high-power inverters.
- Low VCEsat & Switching Losses: Maximizes efficiency in high-frequency operations.
- Integrated DC Capacitor: Enhances circuit stability.
- Al2O3 Substrate & DBC Technology: Superior thermal conductivity and isolation.
- Low-Inductance Design: Minimizes EMI for stable operation.
- Wide Applications: Suitable for PCS, UPS, solar, and APF/SVG systems.
Applications
- 3-Level-Applications
- PCS
- UPS Systems
- Solar Applications
- APF/SVG
Dimensions (mm)
