650V 150A IGBT Power

The HCG150FL065E2RB is a robust 650V 150A IGBT module engineered by Zhejiang HIIITIO New Energy Co., Ltd. for high-power applications. Utilizing a 650V Trench Gate/Field-Stop process, it offers low EMI, reduced switching losses, and a positive VCEsat temperature coefficient for stable performance. Its Al2O3 substrate ensures low thermal resistance, enhancing heat dissipation in demanding environments.

Key Features:

• 650V Trench Gate/Field-Stop Technology: Minimizes EMI and maximizes efficiency.
• Low Switching Losses: Optimizes performance in high-frequency operations.
• Positive V_CEsat Temperature Coefficient: Ensures consistent operation across temperatures.
• Al₂O₃ Substrate: Low thermal resistance for effective heat management.
• Rugged and Compact Design: Integrated clamps for easy, durable mounting.
• Versatile Applications: Perfect for 3-level systems, PCS, UPS, and more.