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650V 100A IGBT Power

  • Collector-Emitter Voltage (VCES): 650V
  • DC Collector Current (ICN): 100A
  • Repetitive Peak Collector Current (ICRM): 200A
  • Power Dissipation (Ptot): 135W
  • Gate-Emitter Voltage (VGES): ±20V
  • Operating Junction Temperature (Tj): Up to 175°C
SKU HCG100FL065E2RB Category

Description

The HCG100FL065E2RB is a high-performance 650V 100A IGBT module designed for advanced power electronics applications. Engineered by Zhejiang HIIITIO New Energy Co., Ltd., this module leverages a 650V Trench Gate/Field-Stop process to deliver low EMI, reduced switching losses, and a positive temperature coefficient for VCEsat. Its compact design, featuring an Al2O3 substrate with low thermal resistance, ensures efficient heat dissipation and reliable performance under demanding conditions.

Key Features:

  • 650V Trench Gate/Field-Stop Technology: Optimized for low EMI and high efficiency.
  • Low Switching Losses: Enhances energy efficiency in high-frequency applications.
  • Positive VCEsat Temperature Coefficient: Ensures stable performance across temperature ranges.
  • Al2O3 Substrate: Provides low thermal resistance for superior heat management.
  • Compact and Rugged Design: Integrated mounting clamps for easy and secure installation.
  • Wide Application Range: Suitable for 3-level systems, PCS, UPS, and more.

Applications

  • 3-Level-Applications
  • PCS
  • UPS Systems
  • Solar Applications

Dimensions (mm)

Downloads

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