The HCG400FH120A2RB is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding applications requiring reliability and efficiency. With a collector-emitter voltage of 1200V and a continuous DC collector current of 400A, this module offers exceptional performance across various power conversion systems.
Key Features:
This IGBT module is built for high-power, high-efficiency applications and is an excellent choice for industries relying on stable and robust performance.
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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