The HCG3000S450S1K1 represents the pinnacle of IGBT technology, offering the highest current rating in our 4500V family. This press-pack module is engineered for the most demanding high-power applications in renewable energy and power transmission systems.
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | VGE=0V,Tvj=25℃ | 4500 | V |
| DC Collector Current | lc | Tc=100℃,Tvj=150℃ | 3000 | A |
| Peak Collector Current | CM | tp=1ms | 6000 | A |
| Gate-Emitter Voltage | VGES | ±20 | V | |
| Total Power Dissipation | Ptot | Tc=25°℃,Tvj=150℃ | 31200 | W |
| DC Forward Current | IF | 3000 | A | |
| Peak Forward Current | IFRM | tp=1ms | 6000 | A |
| Surge Current | IFSM | VR=0V,Tvj=125℃,
tp=10ms,half-sinewave |
21000 | A |
| IGBT Short Circuit SOA | tpsc | Vcc=3400V,VCEM CHIP≤4500V VGE≤15V,Tvj≤125℃ |
10 | μs |
| Maximum Junction Temperature | Tvj(max) | 125 | ℃ | |
| Junction Operating Temperature | Tv(op) | -40~125 | ℃ | |
| Case temperature | Tc | -40~125 | ℃ | |
| Storage Temperature | Tstg | -40~70 | ℃ | |
| Mounting force | FM | 80-100 | kN |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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