The HCG1200FC170D3K5 is a powerful 1700V 1200A IGBT module with a chopper structure, designed for high-power industrial applications. Featuring an E6 package with integrated free-wheeling diode (FWD) and NTC thermistor, it incorporates advanced 1700V trench gate and field stop technology for low losses, high reliability, and robust short circuit protection. This module is perfect for efficient power management in renewable energy and industrial systems.
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | VGE=0V, Tvj=25ยฐC | 1700 | V |
| DC Collector Current | IC | TC=95ยฐC, Tvj max=175ยฐC | 1200 | A |
| Peak Collector Current | ICM | tp=1ms | 2400 | A |
| Gate-Emitter Peak Voltage | VGES | – | ยฑ20 | V |
| IGBT Maximum Power Dissipation | Ptot | TC=25ยฐC, Tvj max=175ยฐC | 5555 | W |
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25ยฐC | 1700 | V |
| Continuous DC Forward Current (Brake-Chopper Diode) | IF | – | 600 | A |
| Continuous DC Forward Current (Reverse Diode) | IF | – | 200 | A |
| Repetitive Peak Forward Current (Brake-Chopper Diode) | IFRM | tp=1ms | 1200 | A |
| Repetitive Peak Forward Current (Reverse Diode) | IFRM | tp=1ms | 400 | A |
| Iยฒt-Value (Brake-Chopper Diode) | Iยฒt | VR=0V, tp=10ms, Tvj=125ยฐC | 58650 | Aยฒs |
| Iยฒt-Value (Reverse Diode) | Iยฒt | VR=0V, tp=10ms, Tvj=125ยฐC | 6615 | Aยฒs |
| Maximum Junction Temperature | Tvj max | – | 175 | ยฐC |
| Operating Junction Temperature | Tvj op | – | -40 to 150 | ยฐC |
| Storage Temperature | Tstg | – | -40 to 125 | ยฐC |
HIITIOยฎ was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
Solution
Support
Years of experience
Countries & Areas
Customers
ใก Manufacturing Factory
ะปะตั ะพะฟััะฐ
ะกััะฐะฝั ะธ ัะตะณะธะพะฝั
ะะปะธะตะฝัะพะฒ
ใก ะัะพะธะทะฒะพะดััะฒะตะฝะฝะฐั ัะฐะฑัะธะบะฐ
Download Our Catalog
