The HCG450FH170D3K5 is a high-performance IGBT module with a 1700V trench gate and field stop structure. It features integrated freewheeling diode (FWD) and NTC thermistor, providing low conduction loss, high power density, and reliable short-circuit withstand capability. Designed with an isolated base plate and standard E6 housing, this module ensures robust performance across industrial and renewable energy applications.
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-emitter voltage | VCES | VGE=0V,Ty=25℃ | 1700 | V |
| DC collector current | lc | Tc=118℃,Tvjmax=175℃ | 450 | A |
| Peak collector current | ICM | tp=1ms | 900 | A |
| Gate-emitter peak voltage | VGES | ±20 | V | |
| Total power dissipation | Ptot | Tc=25℃,Tvjmax=175℃ | 2630 | W |
| Repetitive peak reverse voltage | VRRM | Tvj=25℃ | 1700 | V |
| Continuous DC forward current | IF | 450 | A | |
| Repetitive peak forward current | IFRM | tp=1ms | 900 | A |
| IGBT short circuit withstand time | tpsc | 10 | μs | |
| Maximum junction temperature | Tvjmax | 175 | ℃ | |
| Operating junction temperature | Tvjop | -40~150 | ℃ | |
| Storage temperature | Tstg | -40~125 | ℃ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
Solution
Support
Years of experience
Countries & Areas
Customers
㎡ Manufacturing Factory
лет опыта
Страны и регионы
Клиентов
㎡ Производственная фабрика
Download Our Catalog
