The HCG450FL120A3F5D1 IGBT Module from HIITIO is a high-performance 1200V, 450A power semiconductor in an A3 package. It integrates a freewheeling diode (FWD) and an NTC thermistor for enhanced thermal monitoring and protection. With low switching losses, high power density, and a positive temperature coefficient, this module is designed for demanding power electronics applications.
Parameter | Symbol | Value | Unit |
---|---|---|---|
Maximum junction temperature | Tvjmax | 175 | ℃ |
Operating junction temperature | Tvjop | -40~150 | ℃ |
Storage temperature | Tstg | -40~125 | ℃ |
HIITIO® was established in 2018 as a result of Hecheng Electric introducing a mature R&D team. HIITIO specializes in producing high-voltage DC electrical devices for EV, solar energy systems, and energy storage applications.
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