IGBT Module & SIC MOSFET Manufacturer in China

HIITIO’s power semiconductor products include IGBTs, high-voltage IGBT modules, SiC power modules, SiC/Si hybrid modules, and Schottky diodes. These products feature high temperature tolerance, high voltage tolerance, and high-frequency response characteristics, making them widely applicable in electric vehicles, renewable energy, and industrial fields.

HIITIO Semiconductor Power Modules

HIITIO provides a diverse selection of IGBT & mosfet with various topology structures and packaging forms to meet your needs.

SiC Module

Package: 62mm, Easy 1B, Easy 2B, Econo Dual 3A, Econo Dual 3B, Econo Dual 3C, Flow0, HPD

Circuit Diagram: ANPC, Boost, Chopper, Dual Boost, Three phase, H-Bridge, Half Bridge

Blocking Voltage (V): 1200, 1400, 1700, 2200

IGBT Module

Package: 34mm, 62mm, Easy 2B, Easy 3B, Econo Dual 3H, Econo PACK 2H, Econo PIM 2H, Econo PIM 3H

Circuit Diagram: Booster, Full-Bridge, 3-level, Three phase, Half Bridge, PIM, six-pack

Blocking Voltage (V): 650, 1000, 1100, 1200, 1700

High Voltage IGBT

Package:A/A2:190x140x48, E/E2:190x140x38, F/D:140x130x38, G:160x130x38, N/F/D:140x130x38, P:140x73x38, X:140x130x48, X1:144x100x40

Circuit Diagram: Chopper, Double switch, Half Bridge, Single Switch

Blocking Voltage (V): 1700, 2400, 3300, 4500, 6500

SiC/Si Hybrid Module

Package:Econo Dual 3A, Econo PACK 2H, Flow0, HPD

Circuit Diagram: ANPC, Dual Boost, Three phase, Half Bridge

Blocking Voltage (V): 1200

SiC Schottky Diode

Package: DFN8*8, SOT-227, TO-220-2, TO-220F-3, TO-247-2, TO-247-3, TO-247-4, TO-263-7

Blocking Voltage (V): 650, 1200, 1700

Current(A): 2,4,6,9,16,20,40,42,60,75,120

Custom Solution

We provide customized power module solutions for various scenarios, incorporating technological innovations such as chip-embedded PCBs and double-sided heat dissipation optimization. These solutions meet the specific parameter requirements of fields like new energy vehicles.

See to Believe :HIITIO's Fully Automated Power Module Production Line

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Zhejiang HIITIO New Energy Co., Ltd brings over 20 years of power electronics expertise and a team of 70+ R&D engineers to deliver innovative energy conversion solutions worldwide.

Specializing in IGTB and MOSFET modules, power conversion systems, and advanced packaging technologies, our products power applications like electric vehicles, renewable energy systems, and industrial motor drives.

Connect with us today to transform your energy future!

Why HIITIO

Scalable Production Assurance

HIITIO possesses a 3,100 m² production base, including a 1,500 m² dedicated power module production line. Its 10,000-class cleanrooms support an annual capacity plan of 300,000 units, meeting high-volume delivery demands in industrial and new energy sectors

Top-tier R&D Capabilities

Our R&D team comprises 50% master’s/Ph.D. holders, with core members averaging over 10 years of power module development experience. They have successfully built a full product matrix covering 650-1,700V voltage ranges and 10-800A current ratings, including mainstream topologies like PIM/6-pack/half-bridge.

Military-grade Quality System

Implemented 23 quality control checkpoints such as 100% X-ray void inspection and dynamic/static electrical performance testing. Products comply with IEC-60747/60749/60068 standards, and SiC modules withstand high-temperature operation up to 200°C.

What Set HIITIO Apart ?

Full-process digital twin forward design capability

Through a multi-physics field multi-scale virtual simulation forward design platform, realize systematic coupling simulation analysis from chip to module, with simulation error less than 2%, significantly improving product reliability and shortening the development cycle.

Advanced packaging technology and process

Using nano-silver sintering technology (sintering joint shear force increased by 112.43%, resistivity reduced by 10 times), double-sided cooling module (thermal resistance reduced by 35%), and high-temperature packaging technology to meet the automotive-grade SiC high junction temperature requirements.

Intelligent manufacturing and fully automated production line

Through MES system, visual sensing, and process tracking records, combined with production big data and machine learning, achieve intelligent flexible production, with module-level aging test coverage of 100%.

Quality assurance system benchmarking industry leaders

Adopting quality management standards same as Mitsubishi and Huawei, combined with full-process material traceability and sorting control, to ensure product consistency and high reliability.

Cost control and localized supply chain

Through large-scale DCB substrate integrated design and domestic SiC substrate application, the cost of 1200V SiC MOSFET modules is reduced by 35% compared to imported products, and the delivery cycle is shortened to 8 weeks.

New energy application customized development

For photovoltaic/energy storage systems, launch NPC/ANPC topology dedicated modules, integrating 2kV SiC MOSFET and FRD chips, system efficiency up to 99.2%, and passed automotive-grade AQG324 certification.